La3Ga5SiO14:Cr3+: A broadband near-infrared phosphor induced by the two-site occupation of Cr3+

The broadband near-infrared phosphors are feasible to apply in real-time nondestructive examination. In this work, La3Ga5SiO14:Cr3+ phosphors with the broadband near-infrared emission have been synthesized using a solid state reaction method. Their optical characteristics were investigated via the measurements of ultra-violet-visible diffused reflectance and luminescence spectra. The occupations of Cr3+ ions in La3Ga5SiO14 host were inquired by the X-ray absorption near edge structure and electron paramagnetic resonance analyses. The results indicate that Cr3+ ions substitute octahedral and tetrahedral Ga3+ ions in La3Ga5SiO14 host, which results in a sharp emission band coming from the 2Eg -> 4A2g transitions of Cr3+ and a wide emission band coming from the 4T2g -> 4A2g transitions of Cr3+. The fabricated NIR pc-LED device by combining the synthesized La3Ga5SiO14:0.10Cr3+ phosphor with a blue LED chip indicates that the La3Ga5SiO14:Cr3+ phosphors have po-tential applications in nondestructive examination.

Automated summary

In this study, La3Ga5SiO14:Cr3+ phosphors with broadband near-infrared emission were successfully synthesized and their optical characteristics were investigated through various measurements. The results show that the substitution of Cr3+ ions in the La3Ga5SiO14 host leads to sharp emission bands and wide emission bands originating from different transitions of Cr3+. The fabricated NIR pc-LED device using La3Ga5SiO14:0.10Cr3+ phosphor demonstrates the potential applications of La3Ga5SiO14:Cr3+ phosphors in nondestructive examination.