Journal
ADVANCED MATERIALS
Volume 27, Issue 44, Pages 7168-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201502569
Keywords
-
Categories
Funding
- European Union [263042]
- Horizon Programme (H2020) [644631]
Ask authors/readers for more resources
Industrially scalable and roll-to-roll-compatible fabrication methods are utilized to fabricate high-mobility (approximate to 8 cm(2) V-1 s(-1)) nanocrystalline In2O3 thin-film transistors (TFTs) on a flexible plastic substrate. Flexographic printing of multiple thin In2O3 semiconductor layers from precursor-solution is performed on an Al2O3 gate dielectric obtained via atomic layer deposition. A low-temperature post-contact-annealing step allows control of the TFT device turn-on voltage to approximate to 0 V for enhancement-mode operation.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available