4.7 Article

High-performance self-powered amorphous-BaTiO3/p-Si heterojunction photodetector controlled by ferroelectric effect

Journal

APPLIED SURFACE SCIENCE
Volume 615, Issue -, Pages -

Publisher

ELSEVIER
DOI: 10.1016/j.apsusc.2023.156371

Keywords

BaTiO3; Heterojunction; Ferroelectric effect; Self-powered; UV-visible photodetector

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This study demonstrates a high-performance self-powered UV-visible photodetector enhanced by the ferroelectric effect on amorphous BaTiO3/p-Si heterojunction. The device achieves significantly improved responsivities of 14 mA/W, 27 mA/W, and 223 mA/W at 254 nm, 365 nm, and 600 nm, respectively, outperforming other BaTiO3-based self-driven photodetectors reported. The device also exhibits a fast response speed with rising/fall times of 450 μs/460 μs at 254 nm and 80 μs/140 μs at 600 nm. The defect-assisted recombination of photogenerated carriers at the amorphous BaTiO3/p-Si interface and grain boundaries enables the visualization of transient photocurrent spikes under 254 nm illumination. This work presents a novel strategy for the design and research of high-performance self-powered photodetectors.
The coupling of ferroelectric and photoelectric effects provides a promising alternative for enhancing the per-formance of the photodetectors. Here, a high-performance self-powered UV-visible photodetector enhanced by the ferroelectric effect has been demonstrated on amorphous BaTiO3/p-Si heterojunction. When the depolari-zation field in the ferroelectric BaTiO3 layer is in the same direction as the built-in field at the heterojunction, the responsivities of the device at 0 V can be significantly improved to 14 mA/W, 27 mA/W, and 223 mA/W at 254 nm, 365 nm, and 600 nm, respectively, which is superior to any other reported BaTiO3-based self-driven pho-todetectors. In addition, the device possesses a quick response speed with rising/fall times of 450 mu s/460 mu s at 254 nm and 80 mu s/140 mu s at 600 nm. Moreover, due to the defect-assistant recombination of photogenerated carriers at the amorphous BaTiO3/p-Si interface and grain boundaries in amorphous BaTiO3, the spike of tran-sient photocurrent can be visualized under 254 nm illumination. This work presents a novel strategy for the design and research of high-performance self-powered photodetectors.

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