Amorphous Ta2SnO6: A hole-dopable p-type oxide

Recent research work on searching for high mobility p-type oxides has identified substantial promising p-type oxide candidates. However, very few of them have been experimentally proven with high p-type conductivity, due to their limited p-type dopability caused by the deep valence band edge (VBE). In this work, we report amorphous phase Ta2SnO6 (a-Ta2SnO6) possessing unusually shallow VBE that permits high p-type doping without hole-killing oxygen vacancy defects spontaneous formation, contrasting to crystalline Ta2SnO6 (c-Ta2SnO6). The shallow VBE in a-Ta2SnO6 also allows a low Schottky barrier height with contact metals and unique a -/c-Ta2SnO6 heterostructure device. The shallow VBE in a-Ta2SnO6 is due to the local structure dis-order that circumvents the strong electrostatic Coulombic interaction between positively charged Ta5+ and Sn-5 s lone-pair electrons which accounts for the deep VBE and low p-type dopability in c-Ta2SnO6.

Automated summary

Recent research on high mobility p-type oxides has found some promising candidates, but few have been experimentally proven to have high p-type conductivity due to limited p-type doping. This work reports on a-Ta2SnO6, an amorphous phase oxide, which has a shallow valence band edge (VBE) allowing high p-type doping without oxygen vacancy defects. This is in contrast to the crystalline phase, c-Ta2SnO6, which has a deep VBE and low p-type dopability due to strong electrostatic interaction between Ta5+ and Sn-5s lone-pair electrons.