Related references
Note: Only part of the references are listed.Reduced Fermi Level Pinning at Physisorptive Sites of Moire-MoS2/Metal Schottky Barriers
Zhaofu Zhang et al.
ACS APPLIED MATERIALS & INTERFACES (2022)
Electronic properties of CaF2 bulk and interfaces
Jiaqi Chen et al.
JOURNAL OF APPLIED PHYSICS (2022)
C-Si interface on SiO2/(111) diamond p-MOSFETs with high mobility and excellent normally-off operation
Xiaohua Zhu et al.
APPLIED SURFACE SCIENCE (2022)
Schottky barrier heights of defect-free metal/ZnO, CdO, MgO, and SrO interfaces
Jiaqi Chen et al.
JOURNAL OF APPLIED PHYSICS (2021)
Impact of the interface vacancy on Schottky barrier height for Au/AlN polar interfaces
Hailing Guo et al.
APPLIED SURFACE SCIENCE (2020)
Origin of Weaker Fermi Level Pinning and Localized Interface States at Metal Silicide Schottky Barriers
Zhaofu Zhang et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2020)
Research of n-type arsenic doped diamond: Theoretical analysis of electronic and mechanical properties
Xiang Sun et al.
DIAMOND AND RELATED MATERIALS (2020)
Extending the metal-induced gap state model of Schottky barriers
John Robertson et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2020)
van der Waals Stacking Induced Transition from Schottky to Ohmic Contacts: 2D Metals on Multilayer InSe
Tao Shen et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2019)
Schottky barrier height at metal/ZnO interface: A first-principles study
Jiaqi Chen et al.
MICROELECTRONIC ENGINEERING (2019)
Electron affinity of boron-terminated diamond (001) surfaces: a density functional theory study
Wei Shen et al.
JOURNAL OF MATERIALS CHEMISTRY C (2019)
Materials discovery at high pressures
Lijun Zhang et al.
NATURE REVIEWS MATERIALS (2017)
Does p-type ohmic contact exist in WSe2-metal interfaces?
Yangyang Wang et al.
NANOSCALE (2016)
GaN as an Interfacial Passivation Layer: Tuning Band Offset and Removing Fermi Level Pinning for III-V MOS Devices
Zhaofu Zhang et al.
ACS APPLIED MATERIALS & INTERFACES (2015)
Electronic properties of diamond Schottky barrier diodes fabricated on silicon-based heteroepitaxially grown diamond substrates
Hiroyuki Kawashima et al.
APPLIED PHYSICS EXPRESS (2015)
Electrical contacts to two-dimensional semiconductors
Adrien Allain et al.
NATURE MATERIALS (2015)
Effect of an Ultraflat Substrate on the Epitaxial Growth of Chemical-Vapor-Deposited Diamond
Yukako Kato et al.
APPLIED PHYSICS EXPRESS (2013)
Band offsets, Schottky barrier heights, and their effects on electronic devices
John Robertson
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2013)
An assessment of contact metallization for high power and high temperature diamond Schottky devices
S. Kone et al.
DIAMOND AND RELATED MATERIALS (2012)
Preparation of H-terminated and aminated diamond like carbon surfaces
Wang Mei et al.
RARE METALS (2012)
A review of diamond synthesis by CVD processes
Michael Schwander et al.
DIAMOND AND RELATED MATERIALS (2011)
Non-destructive detection of killer defects of diamond Schottky barrier diodes
Shinya Ohmagari et al.
JOURNAL OF APPLIED PHYSICS (2011)
Extreme dielectric strength in boron doped homoepitaxial diamond
Pierre-Nicolas Volpe et al.
APPLIED PHYSICS LETTERS (2010)
Vertical structure Schottky barrier diode fabrication using insulating diamond substrate
R. Kumaresan et al.
DIAMOND AND RELATED MATERIALS (2010)
Diamond Schottky-pn diode with high forward current density and fast switching operation
Toshiharu Makino et al.
APPLIED PHYSICS LETTERS (2009)
Influence of the exchange screening parameter on the performance of screened hybrid functionals
Aliaksandr V. Krukau et al.
JOURNAL OF CHEMICAL PHYSICS (2006)
Interaction of Pt clusters with the anatase TiO2(101) surface:: A first principles study
Y Han et al.
JOURNAL OF PHYSICAL CHEMISTRY B (2006)
High carrier mobility in single-crystal plasma-deposited diamond
J Isberg et al.
SCIENCE (2002)
Electrical AC behaviour of MPCVD diamond Schottky diodes
L Pereira et al.
DIAMOND AND RELATED MATERIALS (2001)
Band offsets of wide-band-gap oxides and implications for future electronic devices
J Robertson
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2000)