The influence of thermal cycling on the activation energy of conduction electrons and filament temperature in Pt/NiOx/Pt ReRAMs

We investigate the electrical and thermal conduction properties of low- (ON) and high-resistance (OFF) states in Pt/NiOx/Pt based unipolar ReRAM devices during cooling and warming cycles between 300 and 180 K. The conduction electron-trap activation energy was found to decrease upon warming. Although thermal cycling did not significantly affect the average resistance-temperature coefficient of the Pt diffused conductive filaments in the system, the ON-state resistance fluctuations increase at high temperatures, indicating that ambient temperature significantly affects the sizes of the formed filaments. The mechanism behind these thermally activated changes is discussed.

Automated summary

We studied the electrical and thermal conduction properties of Pt/NiOx/Pt based unipolar ReRAM devices in low- (ON) and high-resistance (OFF) states during cooling and warming cycles between 300 and 180 K. The activation energy of conduction electron-trap decreased upon warming. Thermal cycling didn't significantly affect the average resistance-temperature coefficient of the Pt diffused conductive filaments, but it increased the ON-state resistance fluctuations at high temperatures, indicating the influence of ambient temperature on the sizes of formed filaments. The mechanism behind these thermally activated changes is discussed.