Co-doping: An effective strategy for developing stable and high-speed Sb2Te-based phase-change memory

Balancing operation speed and thermal stability is a big challenge in phase change memory (PCM). In this work, a carbon (C) and chromium (Cr) co-doped Sb2Te strategy has been proposed for achieving high operation speed and high stability in PCM applications. In general, doping with the appropriate Cr element is beneficial to improve thermal stability, but it will sacrifice its operation speed. C-doping can enhance thermal stability and retain its fast phase transition properties due to the carbon elements tend to form agglomerates in the host that ameliorate disorder of the amorphous phase without loss of the phase transition rate. Intriguingly, the as-prepared C1.19Cr0.23Sb2Te material exhibits good data retention (T10-year @ 155.0 degrees C) and low-volume change rate (1.8%), as well as fast switching speed (4 ns) and good endurance (>1 x 10(5) cycles). This research indicates that C and Cr co-doping is an effective method to achieve excellent stability of phase-change materials without sacrificing the phase-transition rate of Sb2Te materials.

Automated summary

A carbon and chromium co-doped Sb2Te strategy is proposed to achieve high operation speed and stability in phase change memory (PCM) applications. The co-doping of carbon and chromium enhances thermal stability without sacrificing the phase transition rate, leading to good data retention, low-volume change rate, fast switching speed, and good endurance.