Low-frequency noise in ZrS3 van der Waals semiconductor nanoribbons

We report the results of the investigation of low-frequency electronic noise in ZrS3 van der Waals semiconductor nanoribbons. The test structures were of the back-gated field-effect-transistor type with a normally off n-channel and an on-to-off ratio of up to four orders of magnitude. The current-voltage transfer characteristics revealed significant hysteresis owing to the presence of deep levels. The noise in ZrS3 nanoribbons had spectral density S-I similar to 1/f(gamma)(f is the frequency) with gamma = 1.3-1.4 within the whole range of the drain and gate bias voltages. We used light illumination to establish that the noise is due to generation-recombination, owing to the presence of deep levels, and deter-mined the energies of the defects that act as the carrier trapping centers in ZrS3 nanoribbons.

Automated summary

We investigated the low-frequency electronic noise in ZrS3 van der Waals semiconductor nanoribbons. The test structures were field-effect-transistors with an off n-channel and a high on-to-off ratio. The noise in ZrS3 nanoribbons showed a 1/f(gamma) spectral density with gamma = 1.3-1.4. We used light illumination to determine that the noise is due to generation-recombination caused by deep levels, and determined the energies of the defects acting as carrier trapping centers in ZrS3 nanoribbons.