The thickness effect on the compensation temperature of rare-earth garnet thin films

The anomalous Hall effect measurements are used to probe the magnetization reversal of terbium iron garnet (TbIG) thin films at different temperatures. The compensation temperature (T-comp) of TbIG thin films is revealed, and the film thickness effect on the T-comp is studied. The results indicate a rise of T-comp along with decreasing film thickness. We postulate two possible origins for the observed behavior, namely interfacial element diffusion and strain effects between TbIG films and Gd3Ga5O12 substrates. The results have implications for the study of spintronic devices based on ultrathin rare-earth iron garnet thin films.

Automated summary

The magnetization reversal of terbium iron garnet (TbIG) thin films at different temperatures was studied using anomalous Hall effect measurements. The compensation temperature (T-comp) of TbIG thin films was determined and the effect of film thickness on T-comp was investigated. The results showed that T-comp increases with decreasing film thickness. Two possible origins for this behavior were proposed, including interfacial element diffusion and strain effects between TbIG films and Gd3Ga5O12 substrates. These findings have implications for the study of spintronic devices based on ultrathin rare-earth iron garnet thin films.