Related references
Note: Only part of the references are listed.An Ultrahigh Efficiency Excitonic Micro-LED
Ayush Pandey et al.
NANO LETTERS (2023)
Study on the effect of size on InGaN red micro-LEDs
Ray-Hua Horng et al.
SCIENTIFIC REPORTS (2022)
N-polar InGaN nanowires: breaking the efficiency bottleneck of nano and micro LEDs
Xianhe Liu et al.
PHOTONICS RESEARCH (2022)
Red InGaN micro-light-emitting diodes (>620 nm) with a peak external quantum efficiency of 4.5% using an epitaxial tunnel junction contact
Panpan Li et al.
APPLIED PHYSICS LETTERS (2022)
Investigation and direct observation of sidewall leakage current of InGaN-Based green micro-light-emitting diodes
Youngwook Shin et al.
OPTICS EXPRESS (2022)
N-polar nGaN/GaN nanowires: overcoming the efficiency cliff of red-emitting micro-LEDs
A. Pandey et al.
PHOTONICS RESEARCH (2022)
High-Resolution Mapping of Strain Partitioning and Relaxation in InGaN/GaN Nanowire Heterostructures
Bumsu Park et al.
ADVANCED SCIENCE (2022)
Demonstration of III-Nitride Red LEDs on Si Substrates via Strain-Relaxed Template by InGaN Decomposition Layer
Vincent Rienzi et al.
CRYSTALS (2022)
Degradation by sidewall recombination centers in GaN blue micro-LEDs at diameters < 30 μm
In-Hwan Lee et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2022)
InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering
Yuanpeng Wu et al.
LIGHT-SCIENCE & APPLICATIONS (2022)
Strain-engineered N-polar InGaN nanowires : towards high-efficiency red LEDs on the micrometer scale
A. Pandey et al.
PHOTONICS RESEARCH (2022)
High-temperature electroluminescence properties of InGaN red 40 x 40 μm2 micro-light-emitting diodes with a peak external quantum efficiency of 3.2%
Panpan Li et al.
APPLIED PHYSICS LETTERS (2021)
Correlation between photoluminescence and electroluminescence in GaN-related micro light emitting diodes: Effects of leakage current, applied bias, incident light absorption and carrier escape
Kyuheon Kim et al.
OPTICAL MATERIALS (2021)
InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates
Ryan C. White et al.
CRYSTALS (2021)
Investigation of InGaN-based red/green micro-light-emitting diodes
Zhe Zhuang et al.
OPTICS LETTERS (2021)
Demonstration of relaxed InGaN-based red LEDs grown with high active region temperature
Philip Chan et al.
APPLIED PHYSICS EXPRESS (2021)
Full InGaN red (625 nm) micro-LED (10 μm) demonstration on a relaxed pseudo-substrate
Amelie Dussaigne et al.
APPLIED PHYSICS EXPRESS (2021)
Size-independent peak external quantum efficiency (>2%) of InGaN red micro-light-emitting diodes with an emission wavelength over 600 nm
Panpan Li et al.
APPLIED PHYSICS LETTERS (2021)
630-nm red InGaN micro-light-emitting diodes (<20 μmx20 μm) exceeding 1 mW/mm2 for full-color micro-displays
Zhe Zhuang et al.
PHOTONICS RESEARCH (2021)
Improved performance of InGaN-based red light-emitting diodes by micro-hole arrays
Zhe Zhuang et al.
OPTICS EXPRESS (2021)
Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density
Shiqiang Lu et al.
NANOSCALE RESEARCH LETTERS (2021)
Demonstration of low forward voltage InGaN-based red LEDs
Daisuke Iida et al.
APPLIED PHYSICS EXPRESS (2020)
Comparison of size-dependent characteristics of blue and green InGaN microLEDs down to 1μm in diameter
Jordan M. Smith et al.
APPLIED PHYSICS LETTERS (2020)
Hillock assisted p-type enhancement in N-polar GaN:Mg films grown by MOCVD
Emma Rocco et al.
SCIENTIFIC REPORTS (2020)
633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress
Daisuke Iida et al.
APPLIED PHYSICS LETTERS (2020)
Full InGaN red light emitting diodes
A. Dussaigne et al.
JOURNAL OF APPLIED PHYSICS (2020)
Efficient emission of InGaN-based light-emitting diodes: toward orange and red
Shengnan Zhang et al.
PHOTONICS RESEARCH (2020)
Demonstration of ultra-small (0.2%) for mini-displays
Shubhra S. Pasayat et al.
Applied Physics Express (2020)
Impact of the surface recombination on InGaN/GaN-based blue micro-light emitting diodes
Jianquan Kou et al.
OPTICS EXPRESS (2019)
Enhanced doping efficiency of ultrawide band gap semiconductors by metal-semiconductor junction assisted epitaxy
A. Pandey et al.
PHYSICAL REVIEW MATERIALS (2019)
Understanding the p-Type GaN Nanocrystals on InGaN Nanowire Heterostructures
Yong-Ho Ra et al.
ACS PHOTONICS (2019)
Light Extraction Analysis of A1GaInP Based Red and GaN Based Blue/Green Flip-Chip Micro-LEDs Using the Monte Carlo Ray Tracing Method
Shuyu Lan et al.
MICROMACHINES (2019)
Origin and Control of Orientation of Phosphorescent and TADF Dyes for High-Efficiency OLEDs
Kwon-Hyeon Kim et al.
ADVANCED MATERIALS (2018)
Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters
Chao Zhao et al.
NANOSCALE (2018)
High efficiency of III-nitride micro-light-emitting diodes by sidewall passivation using atomic layer deposition
Matthew S. Wong et al.
OPTICS EXPRESS (2018)
Investigation of Mg δ-doping for low resistance N-polar p-GaN films grown at reduced temperatures by MOCVD
Cory Lund et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2018)
On the mechanism of highly efficient p-type conduction of Mg-doped ultra-wide-bandgap AlN nanostructures
Nhung Hong Tran et al.
APPLIED PHYSICS LETTERS (2017)
Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
Ho-Kyun Ahn et al.
ETRI JOURNAL (2016)
Enhanced light output power of InGaN-based amber LEDs by strain-compensating AlN/AlGaN barriers
Daisuke Iida et al.
JOURNAL OF CRYSTAL GROWTH (2016)
Molecular beam epitaxial growth and characterization of Al(Ga)N nanowire deep ultraviolet light emitting diodes and lasers
Z. Mi et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2016)
Impact of fluorine plasma treatment on AlGaN/GaN high electronic mobility transistors by simulated and experimental results
Zhu Gao et al.
MICROELECTRONIC ENGINEERING (2016)
Facile Formation of High-Quality InGaN/GaN Quantum-Disks-in-Nanowires on Bulk-Metal Substrates for High-Power Light-Emitters
Chao Zhao et al.
NANO LETTERS (2016)
Self-compensation due to point defects in Mg-doped GaN
Giacomo Miceli et al.
PHYSICAL REVIEW B (2016)
Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources
S. Zhao et al.
SCIENTIFIC REPORTS (2015)
Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers
Hieu Pham Trung Nguyen et al.
SCIENTIFIC REPORTS (2015)
Asymmetric tunneling model of forward leakage current in GaN/InGaN light emitting diodes
Ting Zhi et al.
AIP ADVANCES (2015)
Development of InGaN-based red LED grown on (0001) polar surface
Jong-Ii Hwang et al.
APPLIED PHYSICS EXPRESS (2014)
On the Carrier Injection Efficiency and Thermal Property of InGaN/GaN Axial Nanowire Light Emitting Diodes
Shaofei Zhang et al.
IEEE JOURNAL OF QUANTUM ELECTRONICS (2014)
Tuning the surface Fermi level on p-type gallium nitride nanowires for efficient overall water splitting
M. G. Kibria et al.
NATURE COMMUNICATIONS (2014)
Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy
Stephane Brochen et al.
APPLIED PHYSICS LETTERS (2013)
Efficiency droop in light-emitting diodes: Challenges and countermeasures
Jaehee Cho et al.
LASER & PHOTONICS REVIEWS (2013)
Nanostructure and strain in InGaN/GaN superlattices grown in GaN nanowires
Th Kehagias et al.
NANOTECHNOLOGY (2013)
Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes
F. Akyol et al.
APPLIED PHYSICS LETTERS (2012)
Molecular beam epitaxial growth and characterization of catalyst-free InN/InxGa1-xN core/shell nanowire heterostructures on Si(111) substrates
Kai Cui et al.
NANOTECHNOLOGY (2012)
Growth mechanism and properties of InGaN insertions in GaN nanowires
G. Tourbot et al.
NANOTECHNOLOGY (2012)
Tunable p-Type Conductivity and Transport Properties of AlN Nanowires via Mg Doping
Yong-Bing Tang et al.
ACS NANO (2011)
Efficiency and Electron Leakage Characteristics in GaN-Based Light-Emitting Diodes Without AlGaN Electron-Blocking-Layer Structures
Han-Youl Ryu et al.
IEEE PHOTONICS TECHNOLOGY LETTERS (2011)
N-Polar III-Nitride Green (540 nm) Light Emitting Diode
Fatih Akyol et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2011)
Structural and optical properties of InGaN/GaN nanowire heterostructures grown by PA-MBE
G. Tourbot et al.
NANOTECHNOLOGY (2011)
Deep GaN etching by inductively coupled plasma and induced surface defects
J. Ladroue et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2010)
Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy
Wei Guo et al.
NANO LETTERS (2010)
Electron leakage effects on GaN-based light-emitting diodes
Joachim Piprek et al.
OPTICAL AND QUANTUM ELECTRONICS (2010)
Accumulation of fluorine in CF4 plasma-treated AlGaN/GaN heterostructure interface: An experimental investigation
Anirban Basu et al.
JOURNAL OF APPLIED PHYSICS (2009)
The effect of Mg doping on GaN nanowires
E. Cimpoiasu et al.
NANOTECHNOLOGY (2006)
Polarity inversion of GaN(0001) by a high Mg doping
S Pezzagna et al.
JOURNAL OF CRYSTAL GROWTH (2004)
New charge-carrier blocking materials for high efficiency OLEDs
VI Adamovich et al.
ORGANIC ELECTRONICS (2003)
Incorporation of Mg in GaN grown by plasma-assisted molecular beam epitaxy
G Namkoong et al.
APPLIED PHYSICS LETTERS (2000)
Hole conductivity and compensation in epitaxial GaN:Mg layers
U Kaufmann et al.
PHYSICAL REVIEW B (2000)
Inductively coupled plasma-induced etch damage of GaN p-n junctions
RJ Shul et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS (2000)
Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy
IP Smorchkova et al.
APPLIED PHYSICS LETTERS (2000)
Surface polarity dependence of Mg doping in GaN grown by molecular-beam epitaxy
LK Li et al.
APPLIED PHYSICS LETTERS (2000)