A red-emitting micrometer scale LED with external quantum efficiency >8%

Significant efforts are being put into the development of efficient micrometer-scale light emitting diodes (LEDs) for future display technologies due to their marked benefits over existing displays. To date, however, the efficiency of microLED devices remains significantly lower than that of conventional broad-area devices. The deterioration in device performance with smaller device size has been linked to the plasma damage induced on mesa sidewalls during device fabrication. Here, we studied bottom-up red-emitting nanowire LEDs with different Mg doping levels in the p-GaN layer. The resulting sub-micron LED devices show a distinct improvement in efficiency with increasing Mg dopant incorporation. Through optimization of the doping, we measured an external quantum efficiency of similar to 8.3% and a wall-plug efficiency of similar to 4.6%, at a current density of similar to 1 A/cm(2), for a red-emitting sub-micrometer scale LED operating at >630 nm. This study highlights the importance of p-doping in microLEDs for attaining high efficiency performance in nanostructure-based devices.

Automated summary

Efforts are being made to develop efficient micrometer-scale LEDs for future display technologies, but their efficiency remains lower than conventional broad-area devices. This study emphasizes the importance of p-doping in microLEDs for achieving high efficiency performance in nanostructure-based devices.