Tunable hybrid silicon single-electron transistor-nanoscale field-effect transistor operating at room temperature

A hybrid silicon single-electron transistor (SET)-field-effect transistor (FET), tunable by gate voltages between single-electron and classical FET operation, at room temperature (RT) is demonstrated. The device uses a side-gated, similar to 6 nm wide, heavily doped n(+) silicon fin. A gatecontrolled transition occurs from a depletion mode FET, including characteristic output saturation, to a quantum dot SET with Coulomb diamond characteristics above and near the threshold voltage, respectively. Below the threshold voltage, p-FET behavior implies ambipolar operation. Statistics for 180 research devices show a high yield of similar to 37% for RT SET-FET operation and mean single-electron addition energy similar to 0.3 eV. This yield also demonstrates the probability of single-electron effects in highly scaled doped nanoFETs and the possibility of electrically tunable, RT quantum and classical mode, nanoelectronic circuits. (c) 2023 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http:// creativecommons.org/licenses/by/4.0/). https://doi.org/10.1063/5.0154994

Automated summary

A hybrid silicon single-electron transistor-field-effect transistor (SET-FET) that can be tuned between single-electron and classical FET operation at room temperature has been demonstrated. The device utilizes a side-gated heavily doped silicon fin with a width of approximately 6 nm. By controlling the gate voltage, the device transitions from a depletion mode FET to a quantum dot SET with Coulomb diamond characteristics. Statistical analysis of 180 research devices shows a high yield of approximately 37% for room temperature SET-FET operation and a mean single-electron addition energy of approximately 0.3 eV, indicating the possibility of electrically tunable, room temperature quantum and classical mode nanoelectronic circuits.