☆ 4.6 Article

Impurities and defects in 4H silicon carbide

APPLIED PHYSICS LETTERS (2023)

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Article Physics, Multidisciplinary

Design of shallow donor levels in diamond by isovalent-donor coupling

D Segev et al.

PHYSICAL REVIEW LETTERS (2003)

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Article Crystallography

Aluminum doping of epitaxial silicon carbide

U Forsberg et al.

JOURNAL OF CRYSTAL GROWTH (2003)

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Article Physics, Applied

4H-SiC photoconductive switching devices for use in high-power applications

S Dogan et al.

APPLIED PHYSICS LETTERS (2003)

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Article Engineering, Electrical & Electronic

High-purity semi-insulating 4H-SiC for microwave device applications

JR Jenny et al.

JOURNAL OF ELECTRONIC MATERIALS (2003)

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Article Materials Science, Multidisciplinary

Analysis of the sharp donor-acceptor pair luminescence in 4H-SiC doped with nitrogen and aluminum -: art. no. 165211

IG Ivanov et al.

PHYSICAL REVIEW B (2003)

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Article Materials Science, Multidisciplinary

Silicon and carbon vacancies in neutron-irradiated SiC: A high-field electron paramagnetic resonance study

SB Orlinski et al.

PHYSICAL REVIEW B (2003)

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Article Engineering, Electrical & Electronic

Study of trapping phenomenon in 4H-SiC MESFETs: Dependence on substrate purity

N Sghaier et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2003)

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Article Engineering, Electrical & Electronic

Advances in SiC power MOSFET technology

S Dimitrijev et al.

MICROELECTRONICS RELIABILITY (2003)

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