Low-frequency noise characteristics of indium-gallium-zinc oxide ferroelectric thin-film transistors with metal-ferroelectric-metal-insulator-semiconductor structure

We investigate the low-frequency noise characteristics of indium-gallium-zinc oxide ferroelectric thin-film transistors (FeTFTs) with a metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structure. MFMIS FeTFTs are fabricated with different metal-to-FE area ratios (A(M)/A(F)'s). It is revealed that the noise generation mechanism differs depending on the operation region [low and high drain current (I-D) regions] and A(M)/A(F). Excess noise in the low I-D region is observed in the MFMIS FeTFTs with A(M)/A(F)'s of 4 and 6 due to carrier mobility fluctuations. In the high I-D region, the carrier number fluctuation generates the 1/f noise of the devices regardless of the A(M)/A(F).

Automated summary

We investigate the low-frequency noise characteristics of indium-gallium-zinc oxide ferroelectric thin-film transistors (FeTFTs) with a metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structure. The noise generation mechanism differs depending on the operation region and metal-to-FE area ratios (A(M)/A(F)). Excess noise in the low I-D region is observed in the MFMIS FeTFTs with A(M)/A(F) of 4 and 6 due to carrier mobility fluctuations. In the high I-D region, the carrier number fluctuation generates the 1/f noise of the devices regardless of the A(M)/A(F).