Properties of high to ultrahigh Si-doped GaN grown at 550 °C by flow modulated metalorganic chemical vapor deposition

The heterogeneous integration of III-nitride materials with other semiconductor systems for electronic devices is attractive because it combines the excellent electrical properties of the III-nitrides with other device platforms. Pursuing integration through metalorganic chemical vapor deposition (MOCVD) is desirable because of the scalability of the technique, but the high temperatures required for the MOCVD growth of III-nitrides (>1000 degrees C) are incompatible with direct heteroepitaxy on some semiconductor systems and fabricated wafers. Thus, the MOCVD growth temperature of III-nitride films must be lowered to combine them with other systems. In this work, 16 nm-thick Si:GaN films were grown by MOCVD at 550 degrees C using a flow modulation epitaxy scheme. By optimizing the disilane flow conditions, electron concentrations up to 5.9 x 10(19) cm(-3) were achieved, resulting in sheet resistances as low as 1070 O/?. Film mobilities ranged from 34 to 119 cm(2) V-1 s(-1). These results are promising for III-nitride integration and expand device design and process options for III-nitride-based electronic devices.

Automated summary

The growth temperature of III-nitride films was lowered through MOCVD, allowing for heterogeneous integration with other semiconductor systems. By optimizing the flow conditions of disilane, high electron concentrations and low sheet resistances were achieved, expanding device design and process options for III-nitride-based electronic devices.