Polarized Raman scattering spectroscopy of array of embedded graphene ribbons grown on 4H-SiC(0001)

An array of embedded graphene ribbons, whose edges connect to a buffer layer, can be grown on 4H-SiC(0001). The intensity of the Raman D peak of the armchair edge of the ribbon shows the same polarization dependence as that of the non-connected armchair edge of graphene. Considering the Raman scattering process of the D peak at the armchair edge, this polarization dependence indicates that electrons and holes in the embedded graphene by incident photons are scattered back at the boundary of the embedded graphene ribbon and buffer layer. These results show that polarized Raman scattering spectroscopy is useful for investigating the edge structure of embedded graphene.

Automated summary

An array of embedded graphene ribbons, connected to a buffer layer, can be grown on 4H-SiC(0001). The polarization dependence of the Raman D peak intensity at the armchair edge of the ribbon is similar to that of non-connected graphene armchair edges. The polarization dependence suggests that electrons and holes in the embedded graphene are scattered back at the boundary of the embedded graphene ribbon and buffer layer.