Related references
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Article
Engineering, Electrical & Electronic
Yongjian Ma et al.
Summary: In this work, a high-performance beta-Ga2O3 U-shaped trench-gate metal-oxide-semiconductor field-effect transistor (UMOSFET) was demonstrated. Nitrogen ions were used to create a current blocking layer, which allowed electrons to accumulate near the U-shaped groove and form a conductive channel, promoting current generation. By modulating the concentration of implanted nitrogen ions, a UMOSFET with an applicable threshold voltage of 4.2 V was achieved. When the N ions concentration was 5 x 10^18 cm^-3, a high current density of 702.3 A/cm^2, a low on-resistance of 10.4 m Omega.cm^2, and a decent breakdown voltage of 455 V (at V_G =0 V) were obtained. The UMOSFET in this study offers great advantages in the fabrication of high-performance E-mode vertical beta-Ga2O3 MOSFETs and facilitates the development of beta-Ga2O3 power electronics devices.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Physics, Applied
Daiki Wakimoto et al.
Summary: In this study, high-performance normally-off multi-fin beta-Ga2O3 vertical transistors with a wide fin width from 1.0 to 2.0 μm were demonstrated by using a nitrogen-doped beta-Ga2O3 high-resistive layer grown by halide vapor phase epitaxy. Normally-off operation was achieved with a threshold voltage of >= 1.3 V, a specific on-resistance of 2.9 mΩ⋅cm(2), and a current density of 760 A cm(-2) at a gate voltage of +10 V. The estimated MOS channel field effect mobility was similar to 100 cm(2) V-1 s(-1). These findings offer important insights on the development of Ga2O3 MOSFETs and show the great promise of Ga2O3 vertical power devices.
APPLIED PHYSICS EXPRESS
(2023)
Article
Physics, Applied
Zhuoqun Wen et al.
Summary: In this work, Si doping of beta-Ga2O3 (010) films by diluted disilane as the Si source is investigated using hybrid plasma-assisted molecular beam epitaxy. The impact of growth temperature, disilane source concentration, and disilane flow rate on Si incorporation was studied. Uniform Si concentrations ranging from 3 x 10^16 to 2 x 10^19 cm^(-3) are demonstrated. Si-doped beta-Ga2O3 films with different silicon concentrations were grown on Fe-doped beta-Ga2O3 (010) substrates and their electron concentration and mobility were measured.
APPLIED PHYSICS LETTERS
(2023)
Article
Physics, Applied
Takayoshi Oshima et al.
Summary: In this study, SiO2-masked (001) beta-Ga2O3 substrates were dry etched in HCl gas flow at a high temperature without plasma excitation. The etching selectively formed holes or trenches with inner sidewalls of (100) and/or {310} facets, which are planes of lowest surface energy density and oxygen-close-packed slip planes, respectively. The (100) faceted sidewalls were flat and close to the substrate surface normal. This dry etching method shows promise for fabricating plasma-damage-free trenches and fins for beta-Ga2O3-based power devices.
APPLIED PHYSICS LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Feihong Wu et al.
Summary: This paper presents a superior performance beta-gallium oxide (beta-Ga2O3) junction barrier Schottky (JBS) diode with high forward conduction current and reverse breakdown voltage. The implementation of pn heterojunction and beveled field plate contributes to the high power figure of merit. The switching characteristics of large-size beta-Ga2O3 JBS reveal a short reverse recovery time. In addition, a hybrid voltage multiplier using beta-Ga2O3 diode is compared with a circuit based on commercial SiC SBD, showing competitive performance.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Physics, Applied
Fumio Otsuka et al.
Summary: High forward and low leakage current trench MOS-type Schottky barrier diodes (MOSSBDs) were fabricated with a field plate on a 12 μm thick epitaxial layer grown on a beta-Ga2O3 (001) substrate by halide vapor phase epitaxy. The MOSSBDs, measuring 1.7 x 1.7 mm², exhibited a forward current of 2 A (70 A cm(-2)) at 2 V forward voltage and a leakage current of 5.7 x 10(-10) A at -1.2 kV reverse voltage. The ideality factor was 1.05 and the wafer-level specific on-resistance was 17.1 m Omega.cm(2).
APPLIED PHYSICS EXPRESS
(2022)
Article
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Andrew J. Green et al.
Summary: Gallium Oxide has become a leading ultra-wide band gap semiconductor technology due to its favorable material properties. This roadmap presents the current state-of-the-art and future challenges in the field, aiming to enhance device performance and design efficient microelectronic systems.
Article
Chemistry, Multidisciplinary
Lingyu Meng et al.
Summary: In this study, high-quality Ga2O3 thin films were successfully grown with fast growth rates using metalorganic chemical vapor deposition (MOCVD). Key growth parameters and the flow rate of n-type dopant silane were adjusted to achieve high crystalline quality, high mobility, and low compensation level. These results are crucial for the development of high power electronic device technology.
CRYSTAL GROWTH & DESIGN
(2022)
Article
Engineering, Electrical & Electronic
Pengfei Dong et al.
Summary: By employing a deep trench with a filled thick SiO2 layer structure, the β-Ga2O3 Schottky Barrier Diode (SBD) demonstrates improved breakdown voltage and specific on-resistance, exceeding the performance of SiC and GaN. With state-of-the-art values of these performance metrics, the vertical β-Ga2O3 SBDs show great potential for high voltage and high power applications.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Yibo Wang et al.
Summary: This study demonstrates the first beta-Ga2O3 lateral superjunction (SJ)-equivalent metal-oxide-semiconductor field-effect transistors (MOSFETs). The SJ structure is constructed by the selective epitaxial filling of p-NiO pillars into the trenched drift region of beta-Ga2O3. Experimental results show that the Ga(2)O(3) SJ-equivalent MOSFETs outperform the control transistor and exhibit improved breakdown voltage and power figure-of-merit. The charge imbalance caused by substrate-assisted depletion effect and interfacial charges is identified as the reason for the deviation from theoretical predictions.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Shivam Sharma et al.
Summary: This letter presents the vacuum annealing of lateral field-plated beta-Ga2O3 MOSFETs, which leads to significant current recovery and improvement in the on-state resistance after damage induced by Reactive Ion Etching (RIE). MOSFETs based on Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD) grown beta-Ga2O3 wafers are fabricated and characterized to study the effects of vacuum annealing. It is observed that vacuum annealed devices show no reduction in breakdown voltages compared to polymer passivated MOSFETs, and the devices exhibit up to 10 times reduction in on-state resistance compared to previously reported SU-8 passivated devices.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Physics, Applied
Takayoshi Oshima et al.
Summary: Selective area growth of beta-Ga2O3 was demonstrated by HCl-based halide vapor phase epitaxy on SiO2-masked (001) and (010) beta-Ga2O3 substrates. High-aspect-ratio structures with (100) sidewall facets were observed for stripe windows along [010] and [001] directions on the respective substrates. These structures can be applied to trenches and fins for beta-Ga2O3-based power devices.
APPLIED PHYSICS EXPRESS
(2022)
Article
Physics, Applied
Hsien-Chih Huang et al.
Summary: In this work, beta-Ga2O3 FinFETs with metalorganic chemical vapor deposition grown epitaxial Si-doped channel layer on (010) semi-insulating beta-Ga2O3 substrates are demonstrated. Smooth sidewalls of beta-Ga2O3 fin channels are achieved by the plasma-free MacEtch method. The FinFETs exhibit low on-resistance and high breakdown voltage with nearly zero hysteresis in DC transfer characteristics. The effect of channel orientation on device performance is also investigated.
APPLIED PHYSICS LETTERS
(2022)
Article
Chemistry, Physical
Zhengpeng Wang et al.
Summary: Surface treatment after dry etching is crucial for improving the performance of Ga2O3 power diodes. Transient spectroscopies suggest that oxygen annealing and piranha solution treatment can suppress electrically active defects induced by dry etching and improve carrier transport in the devices.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2022)
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Jincheng Zhang et al.
Summary: In this study, Ga2O3 heterojunction PN diodes are demonstrated to overcome the challenges of high breakdown voltage and low doping, achieving high power figure-of-merit and showing great potential for next-generation power electronics applications.
NATURE COMMUNICATIONS
(2022)
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Sushovan Dhara et al.
Summary: This work demonstrates a deep mesa etch design for efficient edge field termination in beta-Ga2O3 Schottky barrier diodes (SBDs). The design enables parallel plate fields higher than 4.1 MV/cm with minimal impact on the device's ON characteristics. The study also analyzes the effect of BCl3/Cl-2-based dry etch on (100) and (010) etched vertical sidewalls, revealing remarkable anisotropy in depletion.
APPLIED PHYSICS LETTERS
(2022)
Review
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Hsien-Chih Huang et al.
Summary: This article reviews the etching of beta-Ga2O3 using various methods, comparing their performance and discussing the challenges faced by these etching techniques for beta-Ga2O3.
JOURNAL OF MATERIALS RESEARCH
(2021)
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Wenshen Li et al.
Summary: This study provides a comprehensive analysis of the ON-resistance (R-ON) of Ga2O3 trench-MOS Schottky barrier diodes, focusing on the impact of sidewall interface trapping. It was found that increasing forward bias leads to the accumulation of negative charges and slow detrapping near the MOS interface, causing current collapse and delayed turn-on behavior in trench SBDs. Interestingly, the dynamic R-ON under forward-bias stress is lower than the fresh R-ON, which can be attributed to modulation of fin-channel conductivity under forward bias.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Physics, Applied
Nidhin Kurian Kalarickal et al.
Summary: In this study, in situ etching using Ga flux is introduced as a method to create high aspect ratio three-dimensional structures in beta-Ga2O3 in an ultra-high vacuum environment. The etching rate ranges from 2.9 to 30 nm/min, and patterned in situ etching is also demonstrated to study the effects of fin orientation and dopant segregation on the etched surface. This method could enable the development of highly scaled vertical and lateral 3D devices in beta-Ga2O3.
APPLIED PHYSICS LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Arkka Bhattacharyya et al.
Summary: This study presents high-performance over 3 kV gate-pad-connected field plated (GPFP) beta-Ga2O3 lateral MESFETs with high lateral figures of merit (LFOM) achieved through metalorganic vapor phase epitaxy (MOVPE) grown channel layers and regrown ohmic contact layers. By utilizing an improved low-temperature MOVPE selective area epitaxy process, the total contact resistance to the channel has been reduced to as low as 1.4 Omega.mm. The GPFP design utilizing plasma-enhanced chemical vapor deposited (PECVD) SiNx dielectric and SiNx/SiO2 wrap-around passivation demonstrates significant improvements in R-ON and breakdown voltage (V-BR), resulting in up to 3x higher LFOM compared to non-FP beta-Ga2O3 lateral MESFETs. The achieved V-BR (approximately 2.5 kV) and LFOM (355 MW/cm^2) in the GPFP beta-Ga2O3 lateral MESFET are the highest reported values in any depletion-mode beta-Ga2O3 lateral device to date.
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