High Hall electron mobility in the inversion layer of 4H-SiC (0001)/SiO2 interfaces annealed in POCl3

Hall effect measurements were conducted for MOSFETs with and without post-oxidation-annealing (POA) fabricated on the p-body doping in a wide doping range to vary the effective normal field (E (eff)). The Hall mobility (& mu; (Hall)) in the high-E (eff) region of the MOSFETs annealed in phosphoryl chloride (& mu; (Hall) = 41 cm(2) V-1 s(-1) at E (eff) = 1.1 MV cm(-1)) is much higher than that of MOSFETs annealed in nitric oxide (NO) (& mu; (Hall) = 14 cm(2) V-1 s(-1) at E (eff) = 1.1 MV cm(-1)), suggesting that the trapped electrons act as strong Coulomb scattering centers for the MOSFETs annealed in NO and without POA.

Automated summary

Hall effect measurements were performed on MOSFETs with and without post-oxidation-annealing (POA) to study the effect of trapped electrons. MOSFETs annealed in phosphoryl chloride exhibited higher Hall mobility in the high effective normal field region compared to MOSFETs annealed in nitric oxide, indicating that trapped electrons act as strong Coulomb scattering centers for the latter.