A Green's function-tight-binding-based approach for T-graphene analysis

The framework of the tight-binding model and Green's function formalism have been derived to investigate the electronic properties of few-layer T-graphene nanoribbons (TGNRs) with different edges including zigzag, bearded, and armchair TGNR (zTGNR, bTGNR, and aTGNR) and the results are compared with those of monolayers. It was observed that single-layer zTGNRs and bTGNRs with metallic properties retain this characteristic as the number of layers increases. In addition, by virtue of their mirror symmetry, aTGNR monolayers exhibit metallic and semiconducting properties by even and odd widths, respectively. When layers are added, symmetric aTGNRs display metallic behavior, while asymmetric aTGNRs display metallic and semiconducting characteristics, depending on the layer stacking. It is also found that the band structure of symmetric aTGNRs and metallic few-layer asymmetric aTGNRs contain Dirac points which increase with increasing their width and layers.

Automated summary

This study investigates the electronic properties of few-layer T-graphene nanoribbons (TGNRs) using the tight-binding model and Green's function formalism, comparing the results with monolayers. It is found that single-layer TGNRs with metallic properties retain this characteristic as the number of layers increases. Monolayers of aTGNR exhibit metallic and semiconducting properties depending on the width, while few-layer aTGNRs display both metallic and semiconducting characteristics based on layer stacking. Additionally, symmetric aTGNRs and metallic few-layer asymmetric aTGNRs have band structures with increasing Dirac points as their width and layers increase.