Journal
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume 129, Issue 4, Pages -Publisher
SPRINGER HEIDELBERG
DOI: 10.1007/s00339-023-06537-w
Keywords
Bismuth-borate glass; Tungsten; ESR; Raman spectroscopy; Electrical properties
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Glasses containing xWO(3)-(30-x)-Bi2O3-15Li2O-15CaO-40B2O3 (0 <= x <= 10) were made using melt-quenching technique. Increasing the concentration of -WO3 resulted in higher glass transition temperature Tg and crystallization temperature Tc, and lower thermal expansion coefficient. Doping the glasses with WO3 caused unique electron spin resonance spectra due to the presence of unpaired pentavalent ions. Raman spectra showed that the glass network mainly consisted of [ BiO6], [ BO3], [ BO4], and [ WO4] structural units. The investigated glasses exhibited semiconductor behavior, with activation energies ranging from 0.02 to 0.08 eV and increasing dielectric constant and conductivities with temperature.
Glasses belonging to the xWO(3)-(30-x)-Bi2O3- 15Li(2)O-15CaO-40B(2)O(3) (0 <= x <= 10) have been obtained by melt-quenching technique. With increasing the concentration of -WO3, an increase in the measured glass transition temperature T-g and crystallization temperature T-c are observed, while the values of the thermal expansion coefficient decrease. Due to the unpaired pentavalent ions, the electron spin resonance spectra of glasses doped with WO3 them show unique signals. The results of Raman spectra show that the glass network is mainly constituted by [ BiO6], [ BO3], [ BO4], and [ WO4] basic structural units. The activation energies for all studied samples were observed to range from 0.02 to 0.08 eV, and the dielectric constant and the conductivities of the investigated glasses increased with increasing temperature. The electrical behavior of the prepared samples revealed their semiconducting character. The prepared samples are being investigated as potential semiconductor material candidates for use in electronic devices.
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