Exploring Zn-Sn-O (ZTO) composition spreads with combinatorial sputtering

Article Physics, Condensed Matter

Efficacy of hydrothermally grown ASnO3 (A-Ca, Sr, Ba) transparent conducting oxide thin films

Sreepriya Muraleedharan et al.

Summary: ASnO(3) nanostructured thin films were grown on corning glass substrates without seed layer via hydrothermal route. The films exhibited high crystallinity and uniform deposition, with promising optical and electrical properties for optoelectronic applications. The materials are cost-effective, non-toxic, and deposited using a simple chemical solution deposition method.

PHYSICA B-CONDENSED MATTER (2022)

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Article Chemistry, Physical

Boltzmann conductivity approach for charge transport in spray-deposited transparent Ta-doped SnO2 thin films

R. Ramarajan et al.

Summary: This study investigates the temperature-dependent electrical properties of Ta-doped SnO2 thin films and their resistance behavior in the high temperature regime. The optimal Ta dopant concentration is found to be 4 wt%, showing potential for wide band gap TCO electrode in various optoelectronic applications.

JOURNAL OF ALLOYS AND COMPOUNDS (2022)

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Article Chemistry, Physical

Fabrication and characterization of sputtered Mg and F co-doped ZnO thin films with different substrate temperature for silicon thin-film solar cell applications

Fang-Hsing Wang et al.

Summary: The influence of substrate temperature on the properties of Mg and F co-doped ZnO thin films was investigated, revealing that higher substrate temperatures can improve crystallinity and optoelectronic properties. This makes MFZO films a preferred transparent conductor for optoelectronic applications.

JOURNAL OF ALLOYS AND COMPOUNDS (2022)

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Article Materials Science, Multidisciplinary

Transparent heterojunctions of Cu-based delafossites n-CuInO2/p-CuGaO2 by reactive evaporation method for transparent electronic applications

Chinnu Esthan et al.

Summary: A transparent conducting Cu-based p-n junction n-CuInO2/p-CuGaO2 was successfully fabricated for the first time using an oxygen plasma assisted reactive evaporation method. The p-n diode exhibited a high rectification ratio, good transmittance, and promising potential as an active device in transparent electronics.

VACUUM (2022)

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Article Materials Science, Multidisciplinary