Journal
ADVANCED MATERIALS
Volume 27, Issue 13, Pages 2224-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201404367
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Funding
- National Research Foundation of Korea [NRF-2013M3C1A3059590, NRF-2014M3A9D7070732, NRF-2013R1A1A2008191, NRF-2013K1A4A3055679]
- Industrial Strategic Technology Development Program [10045145]
- NSERC [RGPIN-05920-2014]
- NSERC Canada
- Korea Evaluation Institute of Industrial Technology (KEIT) [10045145] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2013R1A1A2008191, 2014M3A9D7070732, 2013K1A4A3055679, 22A20130000091, 2013M3C1A3059590, 2013K1A3A1A32035549] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Local-gate multilayer MoS2 phototransistors exhibit a photoresponsivity of up to 342.6 A W-1, which is higher by 3 orders of magnitude than that of globalgate multilayer MoS2 phototransistors. These simulations indicate that the gate underlap is critical for the enhancement of the photoresponsivity. These results suggest that high photoresponsivity can be achieved in indirect-bandgap multilayer MoS2 phototransistors by optimizing the optoelectronic design.
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