Efficient Near-Infrared Electroluminescence from Lanthanide-Doped Perovskite Quantum Cutters

Perovskite nanocrystals (PeNCs) deliver size- and composition-tunable luminescence of high efficiency and color purity in the visible range. However, attaining efficient electroluminescence (EL) in the near-infrared (NIR) region from PeNCs is challenging, limiting their potential applications. Here we demonstrate a highly efficient NIR light-emitting diode (LED) by doping ytterbium ions into a PeNCs host (Yb3+ : PeNCs), extending the EL wavelengths toward 1000 nm, which is achieved through a direct sensitization of Yb3+ ions by the PeNC host. Efficient quantum-cutting processes enable high photoluminescence quantum yields (PLQYs) of up to 126 % from the Yb3+ : PeNCs. Through halide-composition engineering and surface passivation to improve both PLQY and charge-transport balance, we demonstrate an efficient NIR LED with a peak external quantum efficiency of 7.7 % at a central wavelength of 990 nm, representing the most efficient perovskite-based LEDs with emission wavelengths beyond 850 nm.

Automated summary

In this study, we successfully developed a highly efficient near-infrared light-emitting diode (LED) by doping ytterbium ions into perovskite nanocrystals (Yb3+ : PeNCs). This resulted in extended emission wavelengths up to 1000 nm through direct sensitization of Yb3+ ions by the PeNC host. By optimizing halide composition and surface passivation, we achieved a peak external quantum efficiency of 7.7% at a central wavelength of 990 nm, making it the most efficient perovskite-based LED with emission wavelengths beyond 850 nm.