Journal
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 139, Issue 4, Pages 1360-1363Publisher
AMER CHEMICAL SOC
DOI: 10.1021/jacs.6b08511
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Funding
- National Natural Science Foundation of China [51402293, 51602311]
- Strategic Priority Research Program, CAS [XDB20000000]
- Fujian Natural Science Funds for Distinguished Young Scholar [2016J06006]
- Guangdong Natural Science Funds for Distinguished Young Scholar [15ZK0307]
- Fund for Returned Overseas Chinese Scholars - Ministry of Human Resources and Social Security of Fujian Province
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Recently, the emergence of conductive metal organic frameworks (MOFs) has given great prospects for their applications as active materials in electronic devices. In this work, a high-quality, freestanding conductive MOF membrane was prepared by an air liquid interfacial growth method. Accordingly, field-effect transistors (FETs) possessing a crystalline micro porous MOF channel layer were successfully fabricated for the first time. The porous FETs exhibited p-type behavior, distinguishable on/off ratios, and excellent field-effect hole mobilities as high as 48.6 cm(2) V-1 s(-1), which is even comparable to the highest value reported for solution processed organic or inorganic FETs.
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