4.8 Article

Achieving Optimal Self-Adaptivity for Dynamic Tuning of Organic Semiconductors through Resonance Engineering

Journal

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 138, Issue 30, Pages 9655-9662

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/Jacs.6b05042

Keywords

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Funding

  1. National Natural Science Foundation of China [21274065, 21304049, 21001065, 51373050, 61136003]
  2. Qing Lan project of Jiangsu province
  3. Science Fund for Distinguished Young Scholars of Jiangsu Province of China [BK20150041]
  4. New Century Excellent Talents Supporting Program of MOE [NCET-12-0706]

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Current static-state explorations of organic semiconductors for optimal material properties and device performance are hindered by limited insights into the dynamically changed molecular states and charge transport and energy transfer processes upon device operation. Here, we propose a simple yet successful strategy, resonance variation-based dynamic adaptation (RVDA), to realize optimized self-adaptive properties in donor resonance acceptor molecules by engineering the resonance variation for dynamic tuning of organic semiconductors. Organic light-emitting diodes hosted by these RVDA materials exhibit remarkably high performance, with external quantum efficiencies up to 21.7% and favorable device stability. Our approach, which supports simultaneous realization of dynamically adapted and selectively enhanced properties via resonance engineering, illustrates a feasible design map for the preparation of smart organic semiconductors capable of dynamic structure and property modulations, promoting the studies of organic electronics from static to dynamic.

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