Journal
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 138, Issue 36, Pages 11505-11508Publisher
AMER CHEMICAL SOC
DOI: 10.1021/jacs.6b07825
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Funding
- National Science Foundation [CHE-1404922]
- Semiconductor Research Corporation
- New York Center for Advanced Interconnect Science and Technology Program
- Direct For Mathematical & Physical Scien
- Division Of Chemistry [1404922] Funding Source: National Science Foundation
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A highly conducting electronic contact between a strained disilane and Au is demonstrated through scanning tunneling microscope-based single molecule measurements. Conformationally locked cis diastereomers of bis(sulfide)-anchor-equipped 1,2-disilaa-cenaphthenes readily form high-conducting junctions in which the two sulfide anchors bind in a bipodal fashion to one gold electrode, providing enough stability for a stable electrical contact between the Si-Si sigma bond and the other electrode.
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