Discovery of Nanoscale Electric Field-Induced Phase Transitions in ZrO2

The emergence of ferroelectric and antiferroelectric properties in the semiconductor industry's most prominent high-k dielectrics, HfO2 and ZrO2, is leading to technology developments unanticipated a decade ago. Yet the failure to clearly distinguish ferroelectric from antiferroelectric behavior is impeding progress. Band-excitation piezoresponse force microscopy and molecular dynamics are used to elucidate the nanoscale electric field-induced phase transitions present in ZrO2-based antiferroelectrics. Antiferroelectric ZrO2 is clearly distinguished from a closely resembling pinched La-doped HfO2 ferroelectric. Crystalline grains in the range of 3 - 20 nm are imaged independently undergoing reversible electric field induced phase transitions. The electrically accessible nanoscale phase transitions discovered in this study open up an unprecedented paradigm for the development of new nanoelectronic devices.

Automated summary

The emergence of ferroelectric and antiferroelectric properties in HfO2 and ZrO2 high-k dielectrics is leading to unexpected technological developments. However, the lack of clear distinction between these behaviors is hindering progress. This study uses band-excitation piezoresponse force microscopy and molecular dynamics to elucidate electric field-induced phase transitions in ZrO2-based antiferroelectrics. The nanoscale phase transitions discovered in this study provide new opportunities for the development of nanoelectronic devices.