4.8 Article

Color-Stable Two-Dimensional Tin-Based Perovskite Light-Emitting Diodes: Passivation Effects of Diphenylphosphine Oxide Derivatives

Journal

ADVANCED FUNCTIONAL MATERIALS
Volume 33, Issue 29, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.202301304

Keywords

diphenylphosphine oxide derivatives; light-emitting diodes; red emission; tin-based perovskites

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This study investigates the surface modification effects of diphenylphosphine oxide (DPPO) derivatives on PEA(2)SnI(4) film preparation. DPPO derivatives with hydroxyl groups or substituent groups that can form hydroxyl groups are found to have a positive effect in accelerating Sn2+ oxidation, making them unfavorable for surface modification. In contrast, amino-functionalized DPPO molecules effectively modify the defects in PEA(2)SnI(4) films and improve crystallinity. This work demonstrates color-stable pure-red PeLEDs with a narrow emission spectrum at 630 nm, high luminance, and good external quantum efficiency, which have important implications for the selection of effective molecular additives in Sn-based perovskites.
The performance of tin (Sn)-based perovskite light-emitting diodes (PeLEDs) lags behind their lead analogs due to the challenges of Sn2+ oxidation, defect passivation, and fast crystallization. Herein, the passivation effects of diphenylphosphine oxide (DPPO) derivatives on the fabrication of PEA(2)SnI(4) films are investigated. The DPPO derivatives with hydroxyl group, or including substituent group with the potential to form hydroxyl group, are unfavorable passivators due to their positive effects in accelerating Sn2+ oxidation. In comparison, amino-functionalized DPPO molecule is an effective additive to enhance the photoluminescence of PEA(2)SnI(4) films due to the effective defect passivation as well as crystallinity improvement. Based on the optimized films, color-stable pure-red PeLEDs are demonstrated with a full width at half maximum of 23 nm at 630 nm, a maximum luminance of 451 cd m(-2), a maximum external quantum efficiency of 3.51%, and a half-lifetime of 13.7 min at 102 cd m(-2). This work opens new prospects on the selection of effective molecular additives for Sn-based perovskites.

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