Self-Assembly of Janus Graphene Oxide via Chemical Breakdown for Scalable High-Performance Memristors

Janus 2D materials have drawn substantial attention recently owing to its extraordinary interface properties and promising applications in optoelectronic devices. However, the scalable fabrication of high-quality Janus 2D materials is still one of the main obstacles to hinder its implementation in the industry. Herein, a new method (called chemical breakdown) is developed to obtain large-area uniform Janus graphene oxide (J-GO) films with high-quality. Moreover, the first application of J-GO in the field of memristive devices is presented for neuromorphic computing. In particular, crossbar arrays of Ag/J-GO/Au memristive devices that exhibit threshold resistive switching (RS) with enhanced performance are fabricated, e.g., low leakage current (approximate to 10(-12) A), low operation voltage (approximate to 0.3 V), high endurance (>12,000 cycles), and electro-synaptic plasticity. This work provides a novel strategy to obtain large-area, continuous and uniform Janus 2D films, and proposes a new application for Janus 2D materials in a hot topic (i.e., neuromorphic computing) within the field of solid-state microelectronics.

Automated summary

Janus 2D materials have attracted considerable attention due to their exceptional interface properties and potential applications in optoelectronic devices. However, the fabrication of high-quality Janus 2D materials at a scalable level remains a major challenge. In this study, a new method called chemical breakdown is developed to produce large-area uniform Janus graphene oxide (J-GO) films with high-quality. Furthermore, the first application of J-GO in memristive devices for neuromorphic computing is demonstrated, showing enhanced performance in terms of resistive switching, low leakage current, low operation voltage, high endurance, and electro-synaptic plasticity.