4.8 Review

Dielectrics for Two-Dimensional Transition-Metal Dichalcogenide Applications

Journal

ACS NANO
Volume 17, Issue 11, Pages 9870-9905

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsnano.3c03455

Keywords

nanoelectronics; photonics; optoelectronics; valleytronics; spintronics; flexible electronics; quantum sensing; biosensing; quantum informationprocessing; synthesis

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Despite years of research, the full potential of two-dimensional transition-metal dichalcogenides is still limited by challenges in dielectric materials and integration techniques. This review provides an overview of various synthesis and integration techniques and their applicability for 2D transition metal dichalcogenides. It also reviews the progress, challenges, and future prospects for various applications.
Despite over a decade of intense research efforts, thefull potentialof two-dimensional transition-metal dichalcogenides continues to belimited by major challenges. The lack of compatible and scalable dielectricmaterials and integration techniques restrict device performancesand their commercial applications. Conventional dielectric integrationtechniques for bulk semiconductors are difficult to adapt for atomicallythin two-dimensional materials. This review provides a brief introductioninto various common and emerging dielectric synthesis and integrationtechniques and discusses their applicability for 2D transition metaldichalcogenides. Dielectric integration for various applications isreviewed in subsequent sections including nanoelectronics, optoelectronics,flexible electronics, valleytronics, biosensing, quantum informationprocessing, and quantum sensing. For each application, we introducebasic device working principles, discuss the specific dielectric requirements,review current progress, present key challenges, and offer insightsinto future prospects and opportunities.

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