4.8 Article

Nanoscale Periodic Trapping Sites for Interlayer Excitons Built by Deformable Molecular Crystal on 2D Crystal

Journal

ACS NANO
Volume 17, Issue 8, Pages 7775-7786

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsnano.3c00541

Keywords

interlayer exciton; two-dimensional materials; organic molecules; van der Waals heterostructure; trapping; ultrafast dynamics

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Periodic nanoscale potentials can trap interlayer excitons by utilizing the structure deformability of a 2D molecular crystal as a degree of freedom. The PTCDI lattice on MoS2 creates a spatial variation of molecular orbital energy, providing effective trapping sites for IXs.
The nanoscale moire pattern formed at 2D transition-metal dichalcogenide crystal (TMDC) heterostruc-tures provides periodic trapping sites for excitons, which is essential for realizing various exot i c phases such as artificial exciton lattices, Bose-Einstein condensates, and exciton insulators. At organic molecule/TMDC heterostructures , similar periodic potentials can be formed via other degrees of freedom. Here, we utilize the structure deformability of a 2D molecular crystal as a degree of freedom to create a periodic nanoscale potential that can trap interlayer excitons (IXs). Specifically, two semiconducting molecules, PTCDI and PTCDA, which possess simila r band gaps and ionization potentials but form different lattice structures on MoS2, are investigated. The PTCDI lattice on MoS2 is distorted geometrically, which lifts the degeneracy of the two molecules within the crystal's unit cell. The degenerac y lifting results in a spatial variation of the molecular orbital energy, with an amplitude and periodicity of similar to 0.2 eV and similar to 2 nm, respectiv e l y . On the other hand, no such energy variation is observed in PTCDA/MoS2, where the PTCDA lattice is much less distorted . The periodic variation in molecular orbital energies provides effective trapping sites for IXs. For IX s formed at PTCDI/MoS2, rapid spatial localization of the electron in the organic layer toward the interface is observed, which demonstrates the effectiveness of these interfacial I X traps.

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