Long-Term Degradation Mechanisms in Application-Implemented Radical Thin Films

Blatter radical derivativesare very attractive due to their potentialapplications, ranging from batteries to quantum technologies. In thiswork, we focus on the latest insights regarding the fundamental mechanismsof radical thin film (long-term) degradation, by comparing two Blatterradical derivatives. We find that the interaction with different contaminants(such as atomic H, Ar, N, and O and molecular H-2, N-2, O-2, H2O, and NH2) affectsthe chemical and magnetic properties of the thin films upon air exposure.Also, the radical-specific site, where the contaminant interactiontakes place, plays a role. Atomic H and NH2 are detrimentalto the magnetic properties of Blatter radicals, while the presenceof molecular water influences more specifically the magnetic propertiesof the diradical thin films, and it is believed to be the major causeof the shorter diradical thin film lifetime in air.

Automated summary

In this study, we investigate the degradation of radical thin films by comparing two Blatter radical derivatives. We find that the chemical and magnetic properties of the films are affected by interactions with different contaminants. Atomic H and NH2 negatively impact the magnetic properties of Blatter radicals, while molecular water specifically influences the magnetic properties of diradical thin films and contributes to their shorter lifetime in air.