Improved Carrier Lifetimes of CdSe Thin Film via Te Doping for Photovoltaic Application

Cadmium selenide (CdSe) solar cells have proven to be a remarkable potential top cell for a silicon-based tandem application. However, the defects and short carrier lifetimes of CdSe thin films greatly limit the solar cell performance. In this work, a Te-doped strategy is proposed to passivate the Se vacancy defects and increase the carrier lifetime of the CdSe thin film. The theoretical calculation helps to reveal the mechanism of nonradiative recombination of the CdSe thin film in depth. After Te-doping, the calculated capture coefficient of CdSe can be reduced from 4.61 ?? 10???8 cm3 s???1 to 2.32 ?? 10???9 cm3 s???1. Meanwhile, the carrier lifetime of CdSe thin film is increased nearly 3 -fold from 0.53 to 1.43 ns. Finally, the efficiency of the Cd(Se,Te) solar cell is improved to 4.11%, about a relative 36.5% improvement compared to the pure CdSe solar cell. Both theoretical calculations and experiments prove that Te can effectively passivate bulk defects and improve the carrier lifetime of CdSe thin films, deserving further exploration to improve solar cell performance.

Automated summary

In this study, a tellurium-doped strategy is proposed to passivate Se vacancy defects in CdSe thin films and increase carrier lifetime, which leads to improved solar cell performance.