4.8 Article

First-Principles Assessment of CdTe as a Tunnel Barrier at the α-Sn/InSb Interface

Journal

ACS APPLIED MATERIALS & INTERFACES
Volume 15, Issue 12, Pages 16288-16298

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsami.3c00323

Keywords

density functional theory; electronic structure; angle resolved photoemission spectroscopy; metal-semiconductor interface; tunnel barrier; InSb; CdTe; Sn

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Researchers used density functional theory (DFT) with Hubbard U corrections to assess CdTe as a candidate material for the coupling at the lattice-matched interface between alpha-Sn and InSb. They found that 16 atomic layers (3.5 nm) of CdTe can serve as a tunnel barrier, effectively shielding InSb from metal-induced gap states (MIGS) from alpha-Sn. These findings may guide the choice of CdTe barrier dimensions in future Majorana zero modes experiments.
Majorana zero modes, with prospective applications in topological quantum computing, are expected to arise in super-conductor/semiconductor interfaces, such as beta-Sn and InSb. However, proximity to the superconductor may also adversely affect the semiconductor's local properties. A tunnel barrier inserted at the interface could resolve this issue. We assess the wide band gap semiconductor, CdTe, as a candidate material to mediate the coupling at the lattice-matched interface between alpha-Sn and InSb. To this end, we use density functional theory (DFT) with Hubbard U corrections, whose values are machine-learned via Bayesian optimization (BO) [npj Computational Materials 2020, 6, 180]. The results of DFT+U(BO) are validated against angle resolved photoemission spectroscopy (ARPES) experiments for alpha-Sn and CdTe. For CdTe, the z-unfolding method [Advanced Quantum Technologies 2022, 5, 2100033] is used to resolve the contributions of different kz values to the ARPES. We then study the band offsets and the penetration depth of metal-induced gap states (MIGS) in bilayer interfaces of InSb/alpha-Sn, InSb/CdTe, and CdTe/alpha-Sn, as well as in trilayer interfaces of InSb/CdTe/alpha-Sn with increasing thickness of CdTe. We find that 16 atomic layers (3.5 nm) of CdTe can serve as a tunnel barrier, effectively shielding the InSb from MIGS from the alpha-Sn. This may guide the choice of dimensions of the CdTe barrier to mediate the coupling in semiconductor-superconductor devices in future Majorana zero modes experiments.

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