Improving Perovskite Green Quantum Dot Light-Emitting Diode Performance by Hole Interface Buffer Layers

Perovskite quantum dot light-emitting diodes (QLEDs)are potentialcandidates for next-generation displays due to their high color purityand wide color gamut. Due to the strong electron-accepting abilityof poly-[bis-(4-phenyl) (2,4,6-trimethylphenyl) amine] (PTAA), quantumdot (QD) films are prone to be charged, which leads to the imbalanceof charge injection and the increase of nonradiative recombination,ultimately affecting the performance of the QLEDs. Here, we comparedand studied two polymers, poly-(methyl methacrylate) (PMMA) and poly-(vinylpyrrolidone) (PVP), as the hole interface buffer layers of QD films,which effectively reduced the defect density, suppressed nonradiativerecombination, and greatly improved the efficiency and stability ofQLEDs. The devices with PMMA achieved a maximum external quantum efficiencyof 20.71%.

Automated summary

Perovskite quantum dot light-emitting diodes (QLEDs) have potential for next-generation displays. The electron-accepting property of poly-[bis-(4-phenyl) (2,4,6-trimethylphenyl) amine] (PTAA) leads to the charging of quantum dot (QD) films, resulting in imbalance of charge injection and increased nonradiative recombination, affecting the QLEDs performance. This study compared two polymers, poly-(methyl methacrylate) (PMMA) and poly-(vinylpyrrolidone) (PVP), as hole interface buffer layers for QD films. The devices with PMMA achieved a maximum external quantum efficiency of 20.71%.