Improved Performance of g-C3N4 for Optoelectronic Detection of NO2 Gas by Coupling Metal-Organic Framework Nanosheets with Coordinatively Unsaturated Ni(II) Sites

Sensitive and selective optoelectronic detection of NO2 with g-C3N4 (CN) is critical, but it remains challenging to achieve ultralow concentration (ppb-level) detection. Herein, Ni metal-organic frameworks/CN nanosheet heterojunctions were successfully fabricated by the electrostatic induced assembly strategy and then treated by a post-alkali etching process for creating coordinatively unsaturated Ni(II) sites. The optimized heterojunction exhibits a record detection limitation of 1 ppb for NO2, well below that observed on pristine CN, and an outstanding selectivity over other gases, along with long-time stability (120 days) at room temperature. The resulting superior detection performance benefits from the enhanced charge transfer and separation of the closely contacted heterojunction interface and the favorable adsorption of NO2 by unsaturated Ni(II) as selective adsorption sites mainly by means of the time-resolved photoluminescence spectra and in situ X-ray photoelectron spectra. Moreover, the in situ Fourier transform infrared spectra and temperature-programmed desorption disclose that the promotion adsorption of NO2 depends on the strengthened interaction between NO2 and Ni(II) node sites at the aid of OH groups from unsaturated coordination. This work offers a versatile solution to develop promising CN-based optoelectronic sensors at room temperature.

Automated summary

Sensitive and selective optoelectronic detection of NO2 at ultralow concentration (ppb-level) remains challenging. In this study, Ni metal-organic frameworks/CN nanosheet heterojunctions were fabricated by electrostatic induced assembly and post-alkali etching. The optimized heterojunction exhibited a detection limitation of 1 ppb for NO2, along with outstanding selectivity and long-term stability. The superior performance was attributed to enhanced charge transfer and separation at the heterojunction interface, as well as favorable adsorption of NO2 by unsaturated Ni(II) sites.