4.8 Article

Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design

Journal

ADVANCED MATERIALS
Volume 28, Issue 5, Pages 864-870

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201503715

Keywords

contact resistance; doping; edge contact; graphene; optoelectronic devices

Funding

  1. National Research Foundation of Korea (NRF) - Korea Government (MSIP) [2015R1A2A2A01002965]
  2. National Research Foundation of Korea [2015R1A2A2A01002965, 2015H1A2A1034635] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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