Journal
ADVANCED MATERIALS
Volume 28, Issue 8, Pages 1535-1552Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201503500
Keywords
piezo-phototronic effect; light-emitting diodes; semiconductors; pressure-distribution mapping
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Funding
- thousand talents program for the pioneer researcher and the innovation team in China
- Chinese Academy of Sciences
- National Natural Science Foundation of China [51272238, 21321062, 51432005, 61405040]
- U.S. Department of Energy
- Office of Basic Energy Sciences [DE-FG02-07ER46394]
- National Science Foundation [DMR-1505319]
- U.S. Department of Energy (DOE) [DE-FG02-07ER46394] Funding Source: U.S. Department of Energy (DOE)
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Wurtzite materials exhibit both semiconductor and piezoelectric properties under strains due to the non-central symmetric crystal structures. The three-way coupling of semiconductor properties, piezoelectric polarization and optical excitation in ZnO, GaN, CdS and other piezoelectric semiconductors leads to the emerging field of piezo-phototronics. This effect can efficiently manipulate the emission intensity of light-emitting diodes (LEDs) by utilizing the piezo-polarization charges created at the junction upon straining to modulate the energy band diagrams and the optoelectronic processes, such as generation, separation, recombination and/or transport of charge carriers. Starting from fundamental physics principles, recent progress in piezo-phototronic-effect-enhanced LEDs is reviewed; following their development from single-nanowire pressure-sensitive devices to high-resolution array matrices for pressure-distribution mapping applications. The piezo-phototronic effect provides a promising method to enhance the light emission of LEDs based on piezoelectric semiconductors through applying static strains, and may find perspective applications in various optoelectronic devices and integrated systems.
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