Journal
ADVANCED MATERIALS
Volume 27, Issue 7, Pages 1182-1188Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201404296
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Funding
- National Research Foundation of Korea (NRF) - Korea government (MSIP) [NRF-2013R1A2A2A01006404]
- National Research Foundation of Korea [2013R1A2A2A01006404] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Incorporation of Zr into an AlOx matrix generates an intrinsically activated ZAO surface enabling the formation of a stable semiconducting IGZO film and good interfacial properties. Photochemically annealed metal-oxide devices and circuits with the optimized sol-gel ZAO dielectric and IGZO semiconductor layers demonstrate the high performance and electrically/mechanically stable operation of flexible electronics fabricated via a low-temperature solution process.
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