Journal
ADVANCED MATERIALS
Volume 27, Issue 9, Pages 1547-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201405068
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Funding
- Natural Science Foundation of China [11404118, 61390504]
- SRC [2396]
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High-performance MoS2 transistors scaled down to 100 nm are studied at various temperatures down to 20 K, where a highest drive current of 800 mu A mu m(-1) can be achieved. Extremely low electrical noise of 2.8 x 10(-10) mu m(2) Hz(-1) at 10 Hz is also achieved at room temperature. Furthermore, a negative differential resistance behavior is experimentally observed and its origin of self-heating is identified using pulsed-current-voltage measurements.
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