Journal
ADVANCED MATERIALS
Volume 27, Issue 25, Pages 3803-3810Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201500846
Keywords
2D materials; heterostructures; hexagonal transition-metal dichalcogenides; monolayer semiconductors; superlattices
Categories
Funding
- Institute for Basic Science (IBS), Korea [IBS-R014-G1]
- Brain Korea 21 PLUS project [F14SN02D1707]
- National Research Foundation of Korea (NRF) [NRF-2011-0013255]
- Ministry of Science, ICT & Future Planning, Republic of Korea [IBS-R014-D1-2015-A00] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2011-0013255] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ask authors/readers for more resources
2D vertical stacking and lateral stitching growth of monolayer (ML) hexagonal transition-metal dichalcogenides are reported. The 2D heteroepitaxial manipulation of MoS2 and WS2 MLs is achieved by control of the 2D nucleation kinetics during the sequential vapor-phase growth. It enables the creation of hexagon-on-hexagon unit-cell stacking and hexagon-by-hexagon stitching without interlayer rotation misfits.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
