Enhancement of Optical Properties in CdSe Quantum Dots Using Z-type Ligands

We passivated the surfaces of CdSe quantum dots (QDs) with Z-type ligands and demonstrated enhanced emission from the QDs. We studied the effects of the ligands on the quality of the QDs and the presence of cadmium halide complexes in the CdSe QDs functionalized with carboxylic and phosphine ligands. The photoluminescence (PL) intensity of the CdSe QDs treated with Z-type ligands at 40 degrees C for 15 min was enhanced by similar to 2 times compared to that of pristine CdSe QDs because of surface defect passivation. By contrast, the PL intensity of CdSe QDs treated without Z-type ligands at 40 degrees C for 15 min decreased by similar to 20 % compared to that of pristine CdSe QDs because of induced surface defects. The slight changes in the P1 peak position and full width at half-maximum of the CdSe QDs passivated with Z-type ligands at different temperatures can be attributed to the modification of surface properties. In addition, the slight red shift in the PL peak position of the CdSe QDs treated without ligands at 40 degrees C for 15 min is attributed to increased QD size.

Automated summary

We passivated the surfaces of CdSe quantum dots (QDs) with Z-type ligands and demonstrated enhanced emission from the QDs. The presence of Z-type ligands effectively repaired surface defects and increased the photoluminescence intensity of the QDs, while the absence of ligands caused surface defects and decreased the photoluminescence intensity. Temperature and ligand treatment also had an impact on the surface properties and emission of the CdSe QDs.