Journal
ADVANCED MATERIALS
Volume 27, Issue 33, Pages 4858-4864Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201501166
Keywords
chemical vapor deposition; diffusion; growth and etching; hexagonal boron nitride
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Funding
- National Basic Research Program of China [2011CB932700, 2011CB932303, 2013CB933500]
- National Natural Science Foundation of China [61171054, 21273243, 60911130231, 51233006, 61390500]
- Strategic Priority Research Program of the Chinese Academy of Sciences [XDB12030100]
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The full spectrum from attachment-kinetic-dominated to diffusion-controlled modes is revealed for the cases of monolayer h-BN chemical vapor deposition (CVD) growth and Ar/H-2 etching. The sets of grown and etched structures exhibit well-defined shape evolution from Euclidian to fractal geometry. The detailed abnormal processes for merging h-BN flakes into continuous structures or film are first observed and explained.
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