Journal
JOURNAL OF SOLID STATE CHEMISTRY
Volume 240, Issue -, Pages 43-48Publisher
ACADEMIC PRESS INC ELSEVIER SCIENCE
DOI: 10.1016/j.jssc.2016.05.010
Keywords
Band gap; Diffuse-reflectance; Photoluminescence; ITO; Degenerate doping
Funding
- U. S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-FG02-08ER46536]
- Air Products Foundation through the Air Products and Chemicals, Inc. Graduate Fellowship
- W. M. Keck Foundation
- Northwestern University
- NIH
- Rice Foundation
- Robert H. Lurie Comprehensive Cancer Center
- MRSEC program of the National Science Foundation [NSF-DMR-1121262]
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The direct optical band gap of semiconductors is traditionally measured by extrapolating the linear region of the square of the absorption curve to the x-axis, and a variation of this method, developed by Tauc, has also been widely used. The application of the Tauc method to crystalline materials is rooted in misconception-and traditional linear extrapolation methods are inappropriate for use on degenerate semiconductors, where the occupation of conduction band energy states cannot be ignored. A new method is proposed for extracting a direct optical band gap from absorption spectra of degenerately doped bulk semiconductors. This method was applied to pseudo-absorption spectra of Sn-doped In2O3 (ITO) converted from diffuse-reflectance measurements on bulk specimens. The results of this analysis were corroborated by room-temperature photoluminescence excitation measurements, which yielded values of optical band gap and Burstein-Moss shift that are consistent with previous studies on In2O3 single crystals and thin films. (C) 2016 Elsevier Inc. All rights reserved.
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