4.5 Article

Progress and prospects of 2D VS2 transition metal dichalcogenides

Journal

FLATCHEM
Volume 36, Issue -, Pages -

Publisher

ELSEVIER
DOI: 10.1016/j.flatc.2022.100455

Keywords

Transition metal dichalcogenide; 2D material; VS2; Magnetic semiconductor; Heterojunction device; Sensor; Catalysts; Spintronic

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This article systematically reviews the progress of VS2 nanomaterial studies, focusing on their structural characteristics, synthesis methods, and applications. The research finds that tailoring the structure and electronic configuration of VS2 through defect engineering and doping can enhance their physical, chemical, and optical properties, paving the way for more comprehensive application possibilities.
The last two decades have been extremely aggressive towards exploring the materialistic properties and appli-cability of 2D Transition metal dichalcogenides (TMDs) after the discovery of graphene in 2004. Among these TMDs, VS2 nanomaterials have recently caught attention due to their excellent structural, morphological, elec-tronic, magnetic, and electrochemical properties, making them a promising candidate for various applications. Herein, we have systematically reviewed the progress of the VS2 nanomaterial studies based on their detailed structural and morphological characteristics, synthesis methods, and applications. We have focused on specific typical applications of VS2 nanomaterials such as catalysts for hydrogen evolution reaction (HER), field emitters, electrodes for supercapacitors, and other electronic devices, etc., and discussed their corresponding synthesis methods and significant outcomes. The efficient magnetic properties tuning abilities of VS2 also provide possi-bilities for spintronic applications. We have concluded that tailoring the sandwiched layered structure by defect engineering, doping, etc., would further modify their electronic configuration and structural phases, enhancing their physical, chemical, and optical properties. Such tailoring would pave a path toward more comprehensive application possibilities with greater efficiency. With the achievement of a more precise semiconducting material structure, VS2 nanomaterials might become the most efficient TMD that can also be utilized in various photonic and optoelectronic applications.

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