4.7 Article

Self-Assembled δ-CsPbI3 Nanowires for Stable White Light Emission

Journal

ACS APPLIED NANO MATERIALS
Volume 5, Issue 12, Pages 18879-18884

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsanm.2c04655

Keywords

(5-CsPbI3 nanowires; thermal annealing; self-assemble; phase transform; photoluminescence quantum yield; white-light-emitting diode

Funding

  1. MOST [2018YFA0208704]
  2. NSFC [21725305, 22073099, U2001216, 51872036]
  3. Strategic Priority Research Program of Chinese Academy of Sciences [XDB17010100]
  4. Youth Innovation Promotion Association CAS [2019188]
  5. Dalian Youth Science and Technology Star Project Support Program [2019RQ0105]
  6. DICP funding [DICP I201913]
  7. Fundamental Research Funds for the Central Universities [DUT22GJ201]
  8. Dalian Science and Tech-nology Innovation fund [2022JJ12GX023]
  9. State Key Laboratory of Molecular Reaction Dynamics in DICP, CAS [SKLMRD-K202113]

Ask authors/readers for more resources

An all-inorganic cesium lead halide perovskite has shown potential for high-performance optoelectronic devices due to its superior thermal stability. By controlled thermal annealing, stable white-light-emitting (5-CsPbI3 nanowires were obtained and used to create an excellent operational stability WLED lamp bead.
An all-inorganic cesium lead halide perovskite shows great potential for high-performance optoelectronic devices due to its superior thermal stability compared to the organic-inorganic hybrid counterpart. Among the CsPbI3 family, orthorhombic phase ((5-) CsPbI3, in contrast to its cubic phase (alpha-) counterpart, has been believed to be a non-functional material because of its poor optoelectronic property. Herein, stable and white-light-emitting (5-CsPbI3 nanowires (NWs) were obtained from alpha-CsPbI3 quantum dots through self-assembled and phase transition processes after precisely controlled thermal annealing treatment. The optimized (5-CsPbI3 NWs exhibit a broad emission spectrum (similar to 410 to similar to 800 nm) and an impressive photoluminescence quantum yield of 8%. Moreover, as a proof-of-concept application, the white-light-emitting diode (WLED) lamp bead with excellent operational stability are obtained by packing an InGaN-based violet chip (395 nm) and (5-CsPbI3 NWs. Our results give a perspective on (5-phase CsPbI3 for its applications as WLEDs.

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