4.7 Article

Fabrication of Spindt-Type Nanometer-Sized Chromium Tips for Application as Field-Electron Emitters by Releasing the Stress of the Deposited Thin Film

Journal

ACS APPLIED NANO MATERIALS
Volume 6, Issue 1, Pages 351-357

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsanm.2c04457

Keywords

Spindt-type Cr tip; in situ stress-release; high aspect ratio; gated devices; field-electron emission

Ask authors/readers for more resources

Metal cone-shaped nanotip field-electron emitters, known as Spindt-type tips, have shown great potential in vacuum micro-/nanoelectronics. This study presents an in situ stress-release process for fabricating chromium (Cr) tip arrays. The process involves the use of patterned photoresist microcavities and trenches for the formation and stress release of the metal tips. High-aspect-ratio Cr tips were achieved by plasma etching, and a gated Cr-tip array was fabricated using a self-aligned microfabrication procedure. The Cr tips exhibited good etch resistance and showed emission current suitable for various applications.
Metal cone-shaped nanotip field-electron emitters which are fabricated by directional thin-film deposition (so-called Spindt-type tips) have shown promising potential for application in modern vacuum micro-/nanoelectronics. Although the fabrication processes of Spindt-type tips have been well established, the in situ release of the initial stress in the deposited metal thin film is still an open issue. Herein, an in situ stress-release process was developed to fabricate chromium (Cr) tip arrays. Patterned photoresist microcavities with surrounding trenches were designed. The microcavities were used as templates for forming the metal tips. Trenches were employed for the in situ internal stress release of the Cr film on the top of the resist. The trenches not only separated the deposited Cr film into small-sized slices (square film on the photoresist) for decreasing the deformation but also provided sufficient space for possible deformation. High-aspect-ratio (similar to 2) tips were achieved by plasma etching the Si substrate using the Cr tip as the mask, forming a Cr tip on a Si pillar. The Cr tips maintaining a good tip shape demonstrated that the Cr nanotips possessed good etch resistance to the SF6/O2 plasma. The gated Cr-tip array was fabricated following a self-aligned microfabrication procedure. The fabrication process was compatible with the semiconductor manufacturing technology. The gated devices showed an emission current of 33 mu A at a gate voltage of 137 V. This work provides a well-developed in situ stress-releasing fabrication process to obtain Spindt-type Cr-tip field -electron emitters, which has potential for application in ionization vacuum gauges and neutralizers for propulsion.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.7
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available