Journal
ADVANCED MATERIALS
Volume 27, Issue 42, Pages 6575-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201503340
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Funding
- Ten Thousand Talents Program for Young Talents
- Major State Basic Research Development Program [2013CB922302, 2014CB921600]
- Natural Science Foundation of China [11374320, 11322441, 61440063, 61574152]
- Shanghai Science and Technology Foundation [14JC1406400]
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A few-layer MoS2 photodetector driven by poly(vinylidene fluoride-trifluoroethylene) ferroelectrics is achieved. The detectivity and responsitivity are up to 2.2 x 10(12) Jones and 2570 A W-1, respectively, at 635 nm with ZERO gate bias. E-g of MoS2 is tuned by the ultra-high electrostatic field from the ferroelectric polarization. The photo response wavelengths of the photo detector are extended into the near-infrared (0.85-1.55 mu m).
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