Characterization of CdTe Thin Films Using Orthogonal Double-Pulse Laser-Induced Breakdown Spectroscopy

Orthogonal reheating double-pulse laser-induced breakdown spectroscopy (LIBS) was applied to the elemental analysis of CdTe thin film samples. Films were grown through nanosecond pulsed laser ablation over silicon and glass substrates. The analysis was performed by applying a 266 nm pulsed laser devised to minimize sample damage. Re-excitation was conducted using a nanosecond laser emitting at 1064 nm that induced air breakdown 1 mm above the target. Emission enhancement was investigated as a function of both time acquisition delay and inter-pulse delay. The plasma temperature and electron density calculations made showed that the double-pulse scheme produced higher temperature values and a longer plasma duration than single-pulse LIBS. The self-absorption coefficient of the lines was determined from the measured ablated matter, plasma volume and collected spectra. The results of the double-pulse LIBS configuration showed a significant increase in emission intensity, reducing the self-absorption effect. In addition, the relative concentration of the thin films was determined for both experimental schemes. The calculated elemental values for the double-pulse configuration coincide with those expected and are more accurate than those obtained using a single laser.

Automated summary

Orthogonal reheating double-pulse laser-induced breakdown spectroscopy (LIBS) was used to analyze the elements in CdTe thin film samples. The double-pulse scheme produced higher temperature values and a longer plasma duration than single-pulse LIBS. The results showed a significant increase in emission intensity and a reduction in self-absorption effect, leading to more accurate elemental values for the thin films.