The Integration of Reference Electrode for ISFET Ion Sensors Using Fluorothiophenol-Treated rGO

Ion-sensitive field-effect transistors (ISFETs) detect specific ions in solutions that enable straightforward, fast, and inexpensive sensors compared to other benchtop equipment. However, a conventional reference electrode (RE) such as Ag/AgCl is limited on the miniaturization of the sensor. We introduce reduced graphene oxide (rGO), which serves as a new RE, when fluorinated (F-rGO) using fluorothiophenol through the pi-pi interaction. The circular RE is integrated between a fabricated microscale two-channel ISFET, which is capable of detecting two kinds of ions on an indium tin oxide (ITO) thin-film substrate, using the photolithography process. F-rGO bound to this circular region to function as an RE in the ISFETs sensor, which operated stably in solution and showed a relatively high transconductance (g(m)) value (1.27 mS), low drift characteristic (3.2 mV), and low hysteresis voltage (+/- 0.05 mV). It detected proton (H+) ions in a buffer solution with high sensitivity (67.1 mV/pH). We successfully detected Na+ (62.1 mV/dec) and K+ (57.6 mV/dec) ions in human patient urine using a two-channel ISFET with the F-rGO RE. The F-rGO RE will be a suitable component in the fabrication of low-cost, mass-produced, and disposable ISFETs sensors.

Automated summary

In this study, we successfully integrated fluorinated reduced graphene oxide (F-rGO) as a new reference electrode (RE) in microscale ion-sensitive field-effect transistors (ISFETs) sensors. The F-rGO RE showed stable operation, high sensitivity, and low hysteresis voltage, enabling fast and accurate detection of specific ions in solution.